Assignment/DTED
This section is specially for the M.Tech ELDT students of Tezpur University...
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To simulate variation of Threshold voltage versus change in channel length under short channel effect. To simulate variation of Threshold voltage versus change in channel width under narrow width effect. To calculate the value of channel width W for f x g = 1. To calculate the variation of mobility of a MOSFET Device with respect to channel length. To calculate the variation of mobility of a MOSFET Device with respect to channel length Project "Mobility Enhancement using Germanium"
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